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| SKiiP 10 NEC 06 - SKiiP 10 NEC 06 I Absolute Maximum Ratings Symbol Inverter VCES VGES IC ICM IF = -IC IFM = -ICM Conditions 1) Values 600 20 11 / 8 22 / 16 20 / 15 40 / 30 800 12 370 680 - 40 . . . + 150 - 40 . . . + 125 2500 Units V V A A A A V A A A2 s C C V Theatsink = 25 / 80 C tp < 1 ms; Theatsink = 25 / 80 C Theatsink = 25 / 80 C tp < 1 ms; Theatsink = 25 / 80 C MiniSKiiP 1 SEMIKRON integrated intelligent Power SKiiP 10 NEC 06 SKiiP 10 NEC 06 I 3) 1-phase bridge rectifier + 3-phase bridge inverter Case M1 Bridge Rectifier VRRM ID Theatsink = 80 C tp = 10 ms; sin. 180 , Tj = 25 C IFSM I2t tp = 10 ms; sin. 180 , Tj = 25 C Tj Tstg Visol AC, 1 min. Characteristics Symbol Conditions 1) IGBT - Inverter VCEsat IC = 5 A Tj = 25 (125) C VCC = 300 V; VGE = 15 V td(on) tr IC = 5 A; Tj = 125 C Rgon = Rgoff = 200 td(off) inductive load tf Eon + Eoff VCE = 25 V; VGE = 0 V, 1 MHz Cies per IGBT Rthjh - Inverter Diode 2) VF = VEC IF = 10 A Tj = 25 (125) C Tj = 125 C VTO rT Tj = 125 C IF = 10 A, VR = - 300 V IRRM diF/dt = - 200 A/s Qrr Eoff VGE = 0 V, Tj = 125 C per diode Rthjh Diode - Rectifier VF IF = 25 A, Tj = 25 C per diode Rthjh Temperature Sensor RTS T = 25 / 100 C Shunts (SKiiP 10 NEC 06 I) Rcs(dc) 5 % 4) Rcs(ac) 1% Mechanical Data M1 case to heatsink, SI Units Case mechanical outline see page B 16 - 5 2 min. - - - - - - - - - - - - - - - - - typ. max. Units V 2,1(2,2) 2,7(2,8) ns 90 45 ns 110 55 ns 400 270 ns 750 500 mJ - 0,6 nF - 0,29 K/W 3,0 - V 1,45(1,4) 1,7(1,7) V 0,9 0,85 m 80 55 A - 13 C - 1,5 mJ - 0,45 K/W 2,7 - 1,2 - 1000 / 1670 47 22 - M1 2,5 - 2,6 V K/W m m Nm UL recognized file no. E63532 * * common characteristics see page B16-3 specification of shunts and temperature sensor see part A * Options also available with faster IGBTs (type ... 063), data sheet on request Theatsink = 25 C, unless otherwise specified CAL = Controlled Axial Lifetime Technology (soft and fast recovery) with integrated DC and/or AC shunts accuracy of pure shunt, please note that for DC shunt no separate sensing contact is used. 1) 2) 3) 4) (c) by SEMIKRON 0698 B 16 - 15 Fig. 1 Typ. output characteristic, tp = 80 s; 25 C Tj = 125 C VCE = 300 V VGE = 15 V RG = 200 Fig. 2 Typ. output characteristic, tp = 80 s; 125 C Tj = 125 C VCE = 300 V VGE = 15 V IC = 5 A Fig. 3 Turn-on /-off energy = f (IC) ICpuls = 5 A Fig. 4 Turn-on /-off energy = f (RG) VGE = 0 V f = 1 MHz Fig. 5 Typ. gate charge characteristic B 16 - 16 Fig. 6 Typ. capacitances vs. V CE 0698 (c) by SEMIKRON 2. Common characteristics of MiniSKiiP MiniSKiiP 600 V ICop / IC 1.2 Mini0607 Tj = 150 C VGE = 15 V 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 Th [C] Fig. 7 Rated current of the IGBT ICop / IC = f (Th) Tj = 150 C VGE = 15 V Tj = 150 C VGE = 15 V tsc = 10 s Lext < 25 nH Fig. 9 Turn-off safe operating area (RBSOA) of the IGBT Fig. 10 Safe operating area at short circuit of the IGBT Fig. 11 Typ. freewheeling diode forward characteristic (c) by SEMIKRON Fig. 12 Forward characteristic of the input bridge diode 0698 B 16 - 3 MiniSKiiP 1 SKiiP 10 NEC 06 ... SKiiP 11 NEC 06 ... Circuit Case M1 Layout and connections for the customer's printed circuit board Note: The shunts are available only by option I 3. Circuits, Cases, Layout for the Printed Circuit Board |
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